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Gallium nitride
Gallium nitride
(
N
) is a binary
III
/
V
direct bandgap
semiconductor
commonly used in bright
light-emitting diodes
since the 1990s. The
compound
is a very hard material that has a
Wurtzite crystal structure
. Its wide
band gap
of 3.4
eV
affords it special properties for applications in
optoelectronic
, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical
frequency-doubling
.
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