The
22 nanometer (
22 nm)
node is the process step following the
32 nm in
CMOS semiconductor device fabrication. The typical half-pitch (i.e., half the distance between identical features in an array) for a memory cell using the process is around 22 nm. It was first introduced by
semiconductor companies in 2008 for use in
memory products, while first consumer-level
CPU deliveries started in April 2012.