A
Schottky barrier, named after
Walter H. Schottky, is a
potential energy barrier for electrons formed at a
metal–semiconductor junction. Schottky barriers have
rectifying characteristics, suitable for use as a
diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by F
B (see figure). The value of F
B depends on the combination of metal and semiconductor.