Dynamic random-access memory (
DRAM) is a type of
random-access memory that stores each
bit of data in a separate
capacitor within an
integrated circuit. The capacitor can be either charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since even "nonconducting" transistors always leak a small amount, the capacitors will slowly discharge, and the information eventually fades unless the capacitor charge is
refreshed periodically. Because of this refresh requirement, it is a
dynamic memory as opposed to
static random-access memory (SRAM) and other
static types of memory. Unlike
flash memory, DRAM is
volatile memory (vs.
non-volatile memory), since it loses its data quickly when power is removed.