The 65 nanometer (65 nm) process is advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e., transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC, Chartered and TSMC were producing 65 nm chips.