Ferroelectric RAM (
FeRAM,
F-RAM or
FRAM) is a
random-access memory similar in construction to
DRAM but uses a
ferroelectric layer instead of a
dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative
non-volatile random-access memory technologies that offer the same functionality as
flash memory. FeRAM advantages over flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles (exceeding 10
16 for 3.3 V devices). Disadvantages of FeRAM are much lower
storage densities than flash devices, storage capacity limitations, and higher cost.