Programmable metallization cell

The programmable metallization cell, or PMC, is a novel non-volatile computer memory developed at Arizona State University. PMC have been identified as an emerging research device of interest by the International Technology Roadmap for Semiconductors for its ability to scale, in performance, beyond NAND Flash memory. PMC is one of a number of technologies being developed to replace the widely used Flash memory, providing a combination of longer lifetimes, lower power, and better memory density. Infineon Technologies, who licensed the technology in 2004, refers to it as conductive-bridging RAM, or CBRAM. CBRAM® became a registered trademark of Adesto Technologies in 2011. NEC has a variant called “Nanobridge” and Sony calls their version “electrolytic memory”.