The
floating-gate MOSFET (
FGMOS) is a
field-effect transistor, whose structure is similar to a conventional
MOSFET. The gate of the FGMOS is electrically isolated, creating a floating node in DC, and a number of secondary gates or inputs are deposited above the floating gate (FG) and are electrically isolated from it. These inputs are only
capacitively connected to the FG. Since the FG is completely surrounded by highly resistive material, the charge contained in it remains unchanged for long periods of time. Usually
Fowler-Nordheim tunneling and
hot-carrier injection mechanisms are used to modify the amount of charge stored in the FG.